參數(shù)資料
型號(hào)： S29GL01GP12TFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 1G X 1 FLASH 3V PROM, 120 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 69/71頁
文件大?。?/td> 990K
代理商： S29GL01GP12TFI010
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
67
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Table 12.6
System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
V
CC
Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
CC
Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
V
PP
Min. voltage (00h = no V
PP
pin present)
V
PP
Max. voltage (00h = no V
PP
pin present)
Typical timeout per single byte/word write 2
N
μs
1Ch
38h
0036h
1Dh
3Ah
0000h
1Eh
3Ch
0000h
1Fh
3Eh
0006h
20h
40h
0006h
Typical timeout for Min. size buffer write 2
N
μs (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2
N
ms
22h
44h
0013h
Typical timeout for full chip erase 2
N
ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word write 2
N
times typical
24h
48h
0005h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0003h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0002h
Max. timeout for full chip erase 2
N
times typical (00h = not supported)
Table 12.7
Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
Description
27h
4Eh
001Bh
001Ah
0019h
0018h
Device Size = 2
N
byte
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0006h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
60h
64h
66h
68h
0000h
0000h
0000h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0000h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
S29GL01GP12TFI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI020 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI022 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL01GP12TFI010 制造商:Spansion 功能描述:IC SM FLASH 3V 1GB 120NS 制造商:Spansion 功能描述:IC, SM FLASH 3V 1GB 120NS
S29GL01GP12TFI010-AU 制造商:Spansion 功能描述:IC 1GIG 3.0V FLASH MEMORY GOLD/CISCO - Trays
S29GL01GP12TFI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI020 功能描述:閃存 1GB 2.7-3.6V 120ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*