參數(shù)資料
型號: S29GL01GP12TFI010
廠商: SPANSION LLC
元件分類: PROM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述: 1G X 1 FLASH 3V PROM, 120 ns, PDSO56
封裝: 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù): 57/71頁
文件大?。?/td> 990K
代理商: S29GL01GP12TFI010
November21,2006 S29GL-P_00_A3
S29GL-P MirrorBit
TM
Flash Family
55
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
Figure 11.9
Program Operation Timings
Notes
1. PA = program address, PD = program data, D
OUT
is the true data at the program address.
2. Illustration shows device in word mode.
Figure 11.10
Accelerated Program Timing Diagram
Notes
1. Not 100% tested.
2. CE#, OE# = V
IL
3. OE# = V
IL
4. See
Figure 11.3
and
Table 11.1
for test specifications.
OE#
WE#
CE#
V
CC
D
a
t
a
Addre
ss
e
s
t
D
S
t
AH
t
DH
t
WP
PD
t
WHWH1
t
WC
t
A
S
t
WPH
t
VC
S
555h
PA
PA
Re
a
d
S
t
a
t
us
D
a
t
a
(l
as
t two cycle
s
)
A0h
t
C
S
S
t
a
t
us
D
OUT
Progr
a
m Comm
a
nd
S
e
qu
ence (l
as
t two cycle
s
)
RY/BY#
t
RB
t
BU
S
Y
t
CH
PA
ACC
t
VHH
V
HH
V
IL
or V
IH
V
IL
or V
IH
t
VHH
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S29GL01GP12TFI012 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI013 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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S29GL01GP12TFI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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參數(shù)描述
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S29GL01GP12TFI020 功能描述:閃存 1GB 2.7-3.6V 120ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel