參數(shù)資料
型號: S29CD016J1MQFM100
廠商: Spansion Inc.
英文描述: 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述: 32/16兆位的CMOS 2.6伏或3.3伏,只有同時讀/寫,雙啟動,突發(fā)模式閃存記憶體與VersatileI /輸出
文件頁數(shù): 65/76頁
文件大小: 1245K
代理商: S29CD016J1MQFM100
September27,2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
63
D a t a
S h e e t
( P r e l i m i n a r y )
18.7
Alternate CE# Controlled Erase/Program Operations
Notes
1. Not 100% tested.
2. See
Section 20.1 on page 69
for more information.
Table 18.6
Alternate CE# Controlled Erase/Program Operations
Parameter
Description
All Speed
Options
Unit
JEDEC
Std.
t
AVAV
t
AVEL
t
ELAX
t
DVEH
t
EHDX
t
GHEL
t
WLEL
t
EHWH
t
WC
t
AS
t
AH
t
DS
t
DH
t
GHEL
t
WS
t
WH
t
WP
t
CP
t
CPH
t
WHWH1
t
WHWH2
t
WADVS
t
WCKS
Write Cycle Time (Note 1)
Min
65
ns
Address Setup Time
Min
0
ns
Address Hold Time
Min
45
ns
Data Setup Time
Min
35
ns
Data Hold Time
Min
2
ns
Read Recovery Time Before Write(OE# High to WE# Low)
Min
0
ns
WE# Setup Time
Min
0
ns
WE# Hold Time
Min
0
ns
WE# Width
Min
25
ns
t
ELEH
t
EHEL
t
WHWH1
t
WHWH2
CE# Pulse Width
Min
20
ns
CE# Pulse Width High
Min
30
ns
Programming Operation (Note 2)
Double-Word
Typ
9
μs
Sector Erase Operation (Note 2)
Typ
0.5
sec
WE# Rising Edge Setup to ADV# Falling Edge
Min
11.75
ns
WE# Rising Edge Setup to CLK Rising Edge
Min
5
ns
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