參數(shù)資料
型號(hào)： S29CD016J1MQFM100
廠商： Spansion Inc.
英文描述： 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述： 32/16兆位的CMOS 2.6伏或3.3伏，只有同時(shí)讀/寫，雙啟動(dòng)，突發(fā)模式閃存記憶體與VersatileI /輸出
文件頁(yè)數(shù)： 54/76頁(yè)
文件大小： 1245K
代理商： S29CD016J1MQFM100
52
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
D a t a
S h e e t
( P r e l i m i n a r y )
18.2
Asynchronous Operations
Notes
1. Not 100% tested.
2. See
Figure 16.1
and
Table 17.1
for test specifications.
3. TOE during Read Array.
Figure 18.2
Conventional Read Operations Timings
Table 18.2
Asynchronous Read Operations
Parameter
Description
Test Setup
Speed Options
Unit
JEDEC
Std.
75MHz
0R
66MHz
0P
56MHz
0M
40MHz
0J
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
48
54
54
54
ns
t
AVQV
t
ACC
Address to Output Delay
CE# = V
IL
OE# = V
IL
OE# = V
IL
Max
48
54
54
54
ns
t
ELQV
t
GLQV
t
CE
t
OE
Chip Enable to Output Delay
Max
52
54
54
54
ns
Output Enable to Output Delay
Max
20
20
ns
t
EHQZ
t
DF
Chip Enable to Output High Z
(Note 1)
Max
10
ns
t
GHQZ
t
DF
Output Enable to Output High Z
(Note 1)
Min
2
ns
Max
10
ns
t
OEH
Output Enable Hold Time
(Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
(Note 1)
Min
2
ns
t
CE
O
u
tp
u
t
s
WE#
Addre
ss
e
s
CE#
OE#
High Z
O
u
tp
u
t V
a
lid
High Z
Addre
ss
e
s
S
t
ab
le
t
RC
t
ACC
t
OEH
t
OE
0 V
RY/BY#
RE
S
ET#
t
DF
t
OH
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