參數(shù)資料
型號： S29CD016J1MQFI103
廠商： Spansion Inc.
英文描述： 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述： 32/16兆位的CMOS 2.6伏或3.3伏，只有同時讀/寫，雙啟動，突發(fā)模式閃存記憶體與VersatileI /輸出
文件頁數(shù)： 35/76頁
文件大?。?/td> 1245K
代理商： S29CD016J1MQFI103
September27,2006 S29CD-J_CL-J_00_B1
S29CD-J & S29CL-J Flash Family
33
D a t a
S h e e t
( P r e l i m i n a r y )
During an Embedded Program or Erase algorithm operation, two immediate consecutive read cycles to any
address cause DQ6 to toggle. When the operation is complete, DQ6 stops toggling. For asynchronous mode,
either OE# or CE# can be used to control the read cycles. For synchronous mode, the rising edge of ADV# is
used or the rising edge of clock while ADV# is Low.
After an erase command sequence is written, if all sectors selected for erasing are protected, DQ6 toggles for
approximately 100 μs, then returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-
suspended. When the device is actively erasing (that is, the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 μs after the program
command sequence is written, then returns to reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling once the Embedded Program
Algorithm is complete.
See
Figure 18.12,
Toggle Bit Timings (During Embedded Algorithms),
on page 60
for additional information.
8.8.3
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
valid after the rising edge of the final WE# pulse in the command sequence. DQ2 toggles when the system
performs two consecutive reads at addresses within those sectors that have been selected for erasure. But
DQ2 cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ6, by comparison,
indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which sectors
are selected for erasure. Thus, both status bits are required for sector and mode information. Refer to
Table
8.8
to compare outputs for DQ2 and DQ6. See
Section 8.8.2,
DQ6: Toggle Bit I
on page 32
for additional
information.
相關(guān)PDF資料
PDF描述
S29CD016J1MQFI133 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM000 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM002 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM003 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM033 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD016J1MQFI133 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQFM033 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
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