參數(shù)資料
型號： S29CD016J1MFFM033
廠商： SPANSION LLC
元件分類： PROM
英文描述： 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
中文描述： 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, LEAD FREE, FORTIFIED, BGA-80
文件頁數(shù)： 30/76頁
文件大?。?/td> 1245K
代理商： S29CD016J1MFFM033
28
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
D a t a
S h e e t
( P r e l i m i n a r y )
successful sector erase, all locations within the erased sector contain FFFFh. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of no less than 80 μs occurs. During the time-
out period, additional sector addresses and sector erase commands may be written. Loading the sector erase
buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 80 μs. Any sector erase address and command
following the exceeded time-out (80 μs) may or may not be accepted. A time-out of 80 μs from the rising edge
of the last WE# (or CE#) initiates the execution of the Sector Erase com-mand(s). If another falling edge of
the WE# (or CE#) occurs within the 80 μs time-out window, the timer is reset. Any command other than
Sector Erase or Erase Suspend during the time-out period resets that bank to the read mode. The system
can monitor DQ3 to determine if the sector erase timer has timed out (See
Section 8.8.6,
DQ3: Sector Erase
Timer
on page 35
.) The time-out begins from the rising edge of the final WE# pulse in the command
sequence.
When the Embedded Erase algorithm is complete, the bank returns to reading array data; addresses are no
longer latched. The system can determine the status of the erase operation by reading DQ7 or DQ6/DQ2 in
the erasing bank. Refer to
Section 8.8,
Write Operation Status
on page 31
for information on these status
bits.
Once the sector erase operation has begun, only the Erase Suspend command is valid. All other commands
are ignored. However, note that a hardware reset immediately terminates the erase operation. If that occurs,
the sector erase command sequence should be re-initiated once that bank has returned to reading array
data, in order to ensure data integrity.
Figure 8.6 on page 29
illustrates the algorithm for the erase operation. Refer to
Section 8.7,
Program/Erase
Operations
on page 26
for parameters and timing diagrams.
8.7.3
Chip Erase
Chip erase is a six-bus cycle operation as indicated by
Section 20.1,
Command Definitions
on page 69
. The
Chip Erase command is used to erase the entire flash memory contents of the chip by issuing a single
command. However, chip erase does not erase protected sectors.
This command invokes the Embedded Erase algorithm, which does not require the system to preprogram
prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for
an all-zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip contain
FFFFh. The system is not required to provide any controls or timings during these operations.
Section 20.1
in
the appendix shows the address and data requirements for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no
longer latched. The system can determine the status of the erase operation by using DQ7, DQ6 or the RY/
BY#. Refer to
Section 8.8,
Write Operation Status
on page 31
for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase command sequence should be
reinitiated once that bank has returned to reading array data, to ensure data integrity.
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相關代理商/技術參數(shù)
參數(shù)描述
S29CD016J1MFFM100 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM102 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM103 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MFFM133 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
S29CD016J1MQAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
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