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參數(shù)資料
| 型號： | S29CD016J0MQFM003 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
| 封裝： | LEAD FREE, PLASTIC, MO-108CB-1, QFP-80 |
| 文件頁數(shù)： | 42/76頁 |
| 文件大?。?/td> | 1245K |
| 代理商： | S29CD016J0MQFM003 |
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40
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 9.2
PBB Program Operation
9.2.2
Erasing PPB
The All PPB Erase command is used to erase all the PPBs in bulk. There are no means for individually
erasing a specific PPB. The first three cycles of the PPB Erase command are standard unlock cycles. The
fourth cycle executes the erase pulse to all the PBBs. The user must wait either 20ms or until DQ6 stops
toggling before executing the fifth cycle, which is the read verify portion of the PPB Erase Command. The
sixth cycle outputs the status of the PPB Erase operation.
In the event that the erase PPB operation was not successful, the user can loop directly to the fourth cycle of
the All PPB Erase Command to perform the erase pulse and read verification again. After four unsuccessful
loops through the erase pulse and read verification cycles, the PPB erasing operation should be considered a
failure.
Note
All PPB must be preprogrammed prior to issuing the All PPB Erase Command.
Either poll DQ6 in the
s
m
a
ll
ba
nk
a
nd w
a
it for
it to
s
top toggling OR
w
a
it 100
μ
s
DQ0 = 1
Write 0x6
8
to
S
G+WP
Write 0x4
8
to
S
G+WP
Re
a
d from
S
G+WP
YE
S
NO
YE
S
NO
Done
Error
Write 0xAA to 0x555
Write 0x55 to 0x2AA
Write 0x60 to 0x555
5th
a
ttempt
Note:
Re
a
d
s
from the
s
m
a
ll
ba
nk
a
t thi
s
point
ret
u
rn the
s
t
a
t
us
of the
oper
a
tion, not re
a
d
a
rr
a
y
d
a
t
a
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29CD016J0MQFM033 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM100 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM102 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM103 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM133 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016J0MQFM010 | 制造商:Spansion 功能描述:IC - Trays |
| S29CD016J0MQFM013 | 制造商:Spansion 功能描述:FLASH PARALLEL 2.6V 16MBIT 512KX32 54NS 80PQFP - Tape and Reel |
| S29CD016J0MQFM030 | 制造商:Spansion 功能描述:FLASH PARALLEL 2.6V 16MBIT 512KX32 54NS 80PQFP - Trays |
| S29CD016J0MQFM033 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
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