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參數(shù)資料
| 型號(hào)： | S29CD016J0MQFM003 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| 中文描述： | 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 |
| 封裝： | LEAD FREE, PLASTIC, MO-108CB-1, QFP-80 |
| 文件頁(yè)數(shù)： | 40/76頁(yè) |
| 文件大小： | 1245K |
| 代理商： | S29CD016J0MQFM003 |
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38
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 9.1
Advanced Sector Protection/Unprotection
9.1
Advanced Sector Protection Overview
As shipped from the factory, all devices default to the persistent mode when power is applied, and all sectors
are unprotected. The device programmer or host system must then choose which sector protection method to
use. Programming (setting to “0”) any one of the following two one-time programmable, non-volatile bits locks
the device permanently in that mode:
Persistent Protection Mode Lock Bit
Password Protection Mode Lock Bit
After selecting a sector protection method, each sector can operate in any of the following three states:
H
a
rdw
a
re Method
s
S
oftw
a
re Method
s
WP# = V
IL
(Two o
u
termo
s
t
s
ector
s
locked in l
a
rge
ba
nk)
PPB Lock Bit
1,2,
3
64-
b
it P
ass
word
(One Time Protect)
1 = PPB
s
Unlocked
0 = PPB
s
Locked
Memory Arr
a
y
S
ector 0
S
ector 1
S
ector 2
S
ector N-2
S
ector N-1
S
ector N
3
PPB 0
PPB 1
PPB 2
PPB N-2
PPB N-1
PPB N
Per
s
i
s
tent
Protection Bit
(PPB)
4,5
DYB 0
DYB 1
DYB 2
DYB N-2
DYB N-1
DYB N
Dyn
a
mic
Protection Bit
(DYB)
6,7,
8
5. Protect effective only if PPB Lock Bit i
s
u
nlocked
a
nd corre
s
ponding PPB i
s
“0
”
(
u
nprotected).
6. Vol
a
tile Bit
s
.
4. PPB
s
progr
a
mmed individ
ua
lly,
bu
t cle
a
red collectively
1. Bit i
s
vol
a
tile,
a
nd def
au
lt
s
to
“
1
”
on re
s
et.
2. Progr
a
mming to
“
0
”
lock
s
a
ll PPB
s
to their
c
u
rrent
s
t
a
te.
3
. Once progr
a
mmed to
“
0
”
, re
qu
ire
s
h
a
rdw
a
re
re
s
et to
u
nlock.
3
. N = Highe
s
t Addre
ss
S
ector.
P
ass
word Method
(DQ2)
Per
s
i
s
tent Method
(DQ1)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29CD016J0MQFM033 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM100 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM102 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM103 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM133 | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016J0MQFM010 | 制造商:Spansion 功能描述:IC - Trays |
| S29CD016J0MQFM013 | 制造商:Spansion 功能描述:FLASH PARALLEL 2.6V 16MBIT 512KX32 54NS 80PQFP - Tape and Reel |
| S29CD016J0MQFM030 | 制造商:Spansion 功能描述:FLASH PARALLEL 2.6V 16MBIT 512KX32 54NS 80PQFP - Trays |
| S29CD016J0MQFM033 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J0MQFM100 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
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