參數(shù)資料
型號(hào)： S29CD016G0MFAN003
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
中文描述： 512K X 32 FLASH 2.7V PROM, 64 ns, PBGA80
封裝： 13 X 11 MM, 1 MM PITCH, FORTIFIED, BGA-80
文件頁(yè)數(shù)： 75/81頁(yè)
文件大?。?/td> 1276K
代理商： S29CD016G0MFAN003
March 3, 2009 S29CD-G_00_B1
S29CD-G Flash Family
75
Da ta
Shee t
(Prelim i nar y )
Initial Burst Access Delay Control
Figure 3 - Valid Address line changed.
Notes - Clock cycles updated.
Configuration Register
Table 9: CR14 reserve bit assigned ASD.
Table 9: Speed options changed.
Table 10: CR14 reserve changed to ASD.
Table12. Sector Addresses for Ordering Option 00
Bank changed to 0.
Bank changed to 1.
Table 13. Sector Addresses for Ordering Option 01
Bank changed to 0.
Bank changed to 1.
Table 16. Device Geometry Definition
0005 = supports x16 and x32 via WORD#...” Removed.
Unlock Bypass Command Sequence
Table “18” replaced with “19” in text.
Table 19. Memory Array Command Definitions (x32 Mode)
Autoselect (7) - Device ID (11); Fifth/Data changed to “36”.
Table 20. Sector Protection Command Definitions (x32 Mode)
PBB Status (11,12) Third/Addr changed to “SG”. PPB Lock Bit Status; Third/Addr “BA” removed. DYB Status;
Third/Addr changed to “SA”.
Absolute Maximum Ratings
Address, Data... changed to 3.6v.
Table 22 CMOS Compatible
Input High Voltage Max changed to 3.6. RY/BY#, OUtput Low Current Min removed, Max added (8).
Table 23. Test Specifications
Test conditions changed to OJ,OM,OP.
AC Characteristics
Figure 14 updated RESET#.
Table number 24. Asynchronous Read Operations
OM speed options; Output Enable to Output Delay “20” added.
Table 26. Hardware Reset
Last row deleted.
Erase/Program Operations
TWADVH row added. TWCKS row added.
Table 27. Alternate CE# Controlled Erase/Program Operations
TWPH row added, TWADVH row added, TWCKS row added.
Physical Dimensions
Latchup characteristics deleted.
Pin Description
相關(guān)PDF資料
PDF描述
S29CD016G0MFAN010 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD032G0JFFN002 1M X 32 FLASH 2.7V PROM, 67 ns, PBGA80
S29CD032G0RFFN003 1M X 32 FLASH 2.7V PROM, 48 ns, PBGA80
S29CD032G0RQFI012 1M X 32 FLASH 2.7V PROM, 48 ns, PQFP80
S29CL032J0JFAM020 1M X 32 FLASH 3.3V PROM, 54 ns, PBGA80
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29CD016G0MFAN010 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN011 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN012 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFAN013 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
S29CD016G0MFFA000 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
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