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參數(shù)資料
| 型號(hào)： | S29CD016G0JQFI200 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| 中文描述： | 32兆位（1米× 32位），16兆位（512k × 32的位），2.5伏，只有突發(fā)模式，雙啟動(dòng)，同步讀/寫(xiě)閃存與VersatileI內(nèi)存/輸出 |
| 文件頁(yè)數(shù)： | 3/87頁(yè) |
| 文件大?。?/td> | 792K |
| 代理商： | S29CD016G0JQFI200 |
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Publication Number
S29CD-G_00
Revision
B
Amendment
0
Issue Date
November 14, 2005
PRELIMINARY
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not
design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
S29CD-G Flash Family
S29CD032G, S29CD016G
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit)
2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/
Write Flash Memory with VersatileI/O featuring 170 nm
Process Technology
Data Sheet
Distinctive Characteristics
Architecture Advantages
Simultaneous Read/ W rite operations
— Read data from one bank while executing erase/
program functions in other bank
— Zero latency between read and write operations
— Two bank architecture: large bank/small bank
75% /25%
User-Defined x32 Data Bus
Dual Boot Block
— Top and bottom boot sectors in the same device
Flexible sector architecture
— CD032G: Eight 2K Double Word, Sixty-two 16K
Double Word, and Eight 2K Double Word sectors
— CD016G: Eight 2K Double Word, Thirty-two 16K
Double Word, and Eight 2K Double Word sectors
Secured Silicon Sector ( 256 Bytes)
—
Factory locked and identifiabl
e: 16 bytes for secure,
random factory Electronic Serial Number; Also know
as Electronic Marking
Manufactured on 170 nm Process Technology
Programmable Burst interface
— Interfaces to any high performance processor
— Linear Burst Read Operation: 2, 4, and 8 double
word linear burst with or without wrap around
Program Operation
— Performs synchronous and asynchronous write
operations of burst configuration register settings
independently
Single pow er supply operation
— Optimized for 2.5 to 2.75 volt read, erase, and
program operations
Compatibility w ith J EDEC standards ( J C42.4)
— Software compatible with single-power supply Flash
— Backward-compatible with AMD/Fujitsu Am29LV/
MBM29LV and Am29F/MBM29F flash memories
Performance Characteristics
High performance read access
— Initial/random access times of 48 ns (32 Mb) and 54
ns (16 Mb)
— Burst access times of 7.5 ns (32 Mb) or 9 ns (16Mb)
Ultra low pow er consumption
— Burst Mode Read: 90 mA @ 75 MHz max
— Program/Erase: 50 mA max
— Standby mode: CMOS: 60 μA max
1 million w rite cycles per sector typical
20 year data retention typical
V ersatileI / O control
— Generates data output voltages and tolerates data
input voltages as determined by the voltage on the
V
IO
pin
— 1.65 V to 3.60 V compatible I/O signals
Softw are Features
Persistent Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector (requires only V
CC
levels)
Passw ord Sector Protection
— Locks combinations of individual sectors and sector
groups to prevent program or erase operations
within that sector using a user-definable 64-bit
password
Supports Common Flash I nterface ( CFI )
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardw are Features
Program Suspend/ Resume & Erase Suspend/
Resume
— Suspends program or erase operations to allow
reading, programming, or erasing in same bank
Hardw are Reset ( RESET# ) , Ready/ Busy# ( RY /
BY # ) , and W rite Protect ( W P# ) inputs
ACC input
— Accelerates programming time for higher throughput
during system production
Package options
— 80-pin PQFP
— 80-ball Fortified BGA
— Pb-free package option also available
— Known Good Die
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29CD016G0MFAA002 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0MFAA010 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0MFAA012 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFAA000 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JFAA002 | 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016G0JQFI202 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQFI210 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQFI212 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQFM000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD016G0JQFM002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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