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參數(shù)資料
| 型號(hào)： | S2551 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For visible to infrared precision photometry |
| 中文描述： | 硅光電二極管對可見光到紅外測光精度 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 87K |
| 代理商： | S2551 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
6
Hamamatsu Photonics K.K.
Si photodiode
S2551
Cat. No. KSPD1027E02
Aug. 2006
DN
S
AMBIENT TEMPERATURE (C)
-20
(Typ. V
R
=
10 mV)
10 k
0
20
40
60
80
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
10
2
(Typ. Ta
=
25
C, V
R
=
0 V)
10 ns
10
3
10
4
10
5
100 ns
1
μ
s
10
μ
s
100
μ
s
1 ms
R
LOAD RESISTANCE (
)
D
REVERSE VOLTAGE
(V)
0.01
(Typ. Ta
=
25
C)
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
T
C
190
400
600
800
1000
WAVELENGTH (nm)
0
(Typ. )
+0.5
+1.0
-1.5
+1.5
0.45
LEAD
ACTIVE AREA
1.2
×
29.1
1
3
0
29.1
33.1 ± 0.7
40.0 ± 0.7
3
-
0
+
0
33.1 ± 0.7
1
PHOTOSENSITIVE
SURFACE
The resin coating may extend a
maximum of 0.1 mm beyond the
upper surface of the package.
KSPDA0116EA
I
Dimensional outline (unit: mm)
0.1
190
400
600
800
1000
0.3
0.2
(Typ. Ta
=
25
C)
0.4
0.5
0.6
0.7
P
WAVELENGTH (nm)
I
Spectral response
KSPDB0173EA
KSPDB0053EB
I
Rise time vs. load resistance
KSPDB0174EA
KSPDB0175EA
I
Dark current vs. reverse voltage
I
Photo sensitivity temperature characteristic
I
Shunt resistance vs. ambient temperature
KSPDB0176EA
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