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參數(shù)資料
| 型號(hào)： | S2551 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For visible to infrared precision photometry |
| 中文描述： | 硅光電二極管對(duì)可見(jiàn)光到紅外測(cè)光精度 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | S2551 |
Features
l
Long, narrow active area: 1.2 × 29.1 mm
l
High sensitivity
l
Low capacitance
Applications
l
Analytical instruments
l
Optical measurement equipment
P H O T O D I O D E
Si photodiode
S2551
For visible to infrared precision photometry
S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry.
I
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Max.
Topr
Tstg
Value
30
-20 to +60
-20 to +80
Unit
V
°
C
°
C
I
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Symbol
λ
λ
p
Condition
Min.
-
-
-
-
24
-
-
-
-
0.01
-
Typ.
Max.
-
-
-
-
-
1
-
-
-
-
-
Unit
nm
nm
A/W
A/W
μ
A
nA
320 to 1060
920
0.6
0.37
30
-
1.15
1.4
350
0.03
3.9 × 10
-14
λ
=
λ
p
λ
=663 nm
100
lx
V
R
=10 mV
Photo sensitivity
S
Short circuit current
Dark current
Temperature coefficient of I
D
Rise time
Terminal capacitance
Shunt resistance
Noise equivalent power
Isc
I
D
T
CID
tr
Ct
Rsh
NEP
times/
°
C
μ
s
pF
G
W/Hz
1/2
V
R
=0 V, R
L
=1 k
V
R
=0 V, f=10 kHz
V
R
=10 mV
V
R
=0 V,
λ
=
λ
p
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