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參數(shù)資料
| 型號(hào)： | S2383 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si APD Low bias operation, for 800 nm band |
| 中文描述： | 泗APD的低偏壓運(yùn)作，為800納米帶 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 152K |
| 代理商： | S2383 |
S2381 to S2385, S5139, S8611, S3884
Low bias operation, for 800 nm band
Features
l
Stable operation at low bias
l
High-speed response
l
High sensitivity and low noise
Applications
l
Spatial light transmission
l
Rangefinder
P H O T O D I O D E
Si APD
1
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Operating
temperature
Topr
(°C)
Active area *
2
size
Effective active
area
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline/
Window
material *
1
Package
(mm)
φ
0.2
(mm
2
)
0.03
S2381
S2382
S5139
S8611
S2383
S2383-10 *
3
S3884
S2384
S2385
/K
/L
/L
φ
0.5
0.19
/K
TO-18
φ
1.0
0.78
/K
/K
/K
φ
1.5
φ
3.0
φ
5.0
1.77
7.0
19.6
TO-5
TO-8
-20 to +85
-55 to +125
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Breakdown
voltage
V
BR
I
D
=100 μA
Dark
current *
4
I
D
Spectral
response
range
λ
Peak
*
4
sensitivity
wavelength
λ
p
Photo
sensitivity
S
M=1
λ
=800 nm
Quantum
efficiency
QE
M=1
λ
=800 nm
Temp.
coefficient
of
V
BR
Cut-off *
4
frequency
fc
R
L
=50
Terminal
*
4
capacitance
Ct
Excess
Noise
figure *
4
x
λ
=800 nm
Gain
M
λ
=800 nm
Type No.
(nm)
(nm)
(A/W)
(%)
Typ.
(V)
Max.
(V)
(V/°C)
Typ.
(nA)
0.05
Max.
(nA)
0.5
(MHz)
1000
(pF)
1.5
S2381
S2382
S5139
S8611
S2383
S2383-10 *
3
S3884
S2384
S2385
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
0.1
1
900
3
0.2
2
600
6
0.5
1
3
5
400
120
40
10
40
95
100
10
30
60
40
400 to 1000
800
0.5
75
150 200
0.65
0.3
Note) The following different breakdown voltage ranges are available.
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S2383-10 | Si APD Low bias operation, for 800 nm band |
| S2384 | Si APD Low bias operation, for 800 nm band |
| S2385 | Si APD Low bias operation, for 800 nm band |
| S2551 | Si photodiode For visible to infrared precision photometry |
| S2592 | Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S2383-10 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Low bias operation, for 800 nm band |
| S2384 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2385 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si APD Low bias operation, for 800 nm band |
| S2386 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2386-18K | 制造商:MISCELLANEOUS 功能描述: |
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