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參數(shù)資料
| 型號： | S1T8825X01-R0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OSC 5V SMT 7X5 CMOS PROGRM |
| 中文描述： | 1.1GHz的雙鎖相環(huán) |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 120K |
| 代理商： | S1T8825X01-R0B0 |
S1T8825
1.1GHZ DUAL PLL
4
PRELINIMARY( VER.2.1 )
ELECTRICAL CHARACTERISTICS
(Ta = 25
°
C, V
CC
= 3V, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Operating power supply
voltage
V
CC
Fin1=Fin2= 200MHz ~ 550MHz
2.2
3.0
5.5
V
Fin1=Fin2= 550MHz ~ 1.1GHz
2.7
3.0
3.6
V
Operating current
consumption
I
CC
Fin1=Fin2=1.1GHz/ -5dBm input
3.5
5.5
7.5
mA
Standby current
I
SB
Standby mode
0
10
μ
A
Fin operating frequency
Fin
Fin1 = Fin2 =
5dBm
200
1100
MHz
Fin input sensitivity
Fin
Fin1 = Fin2
= 200MHz
Vcc=2.2V
15
0
dBm
Vcc=3.0V
15
0
Vcc=5.5V
10
0
Fin1 = Fin2
= 550MHz
Vcc=2.2V
15
0
Vcc=3.0V
15
0
Vcc=5.5V
10
0
Fin1 = Fin2
= 1.1GHz
Vcc=2.7V
10
0
Vcc=3.0V
10
0
Vcc=3.6V
10
0
OSCI operating frequency
F
osc
V
Fin
= 0dBm, sinewave
5
-
25
MHz
OSCI input voltage
V
osc
f
osc
= 10MHz
Vcc = 2.2V
10
0
5
dBm
Vcc = 3.0V
10
0
5
Vcc = 5.5V
0
-
5
f
osc
= 20MHz
Vcc = 2.2V
10
0
5
Vcc = 3.0V
10
0
5
Vcc = 5.5V
5
0
5
Serial data input high
voltage (CK, DATA, EN)
V
IH
V
CC
= 2.2 to 5.5V
V
CC
0.4
-
V
Serial data input low voltage
(CK, DATA, EN)
V
IL
V
CC
= 2.2 to 5.5V
0.4
V
Charge pump output
current
I
CP1
CP1 = 0, CP2 = 0 VCP = 1.5 V
–
±
100
μ
A
I
CP2
CP1 = 1, CP2 = 0 VCP = 1.5V
–
±
200
μ
A
I
CP3
CP1 = 0, CP2 = 1 VCP = 1.5V
±
400
μ
A
I
CP4
CP1 = 1, CP2 = 1 VCP = 1.5V
±
800
μ
A
Charge pump leakage
I
CPL
Standby mode, Vcp = 1.5V
1
+
1
μ
A
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