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參數(shù)資料
| 型號： | S1T8825X01-R0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | OSC 5V SMT 7X5 CMOS PROGRM |
| 中文描述： | 1.1GHz的雙鎖相環(huán) |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 120K |
| 代理商： | S1T8825X01-R0B0 |
1.1GHZ DUAL PLL
S1T8825
3
PRELIMINARY ( VER.2.1 )
PIN DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Pin No.
Symbol
I/O
Description
1
Fin1
I
Input terminal of channel 1 RF signal.
2, 15
Vcc
Power supply voltage input. PIN2 and PIN15 are connected together.
3
CP1
O
Output terminal of channel 1 charge pump. Charge pump is constant current output
circuit, and output current is selected by input serial data.
4, 13
GND
Terminal of GND. PIN4 and PIN13 are connected together.
5
LD
O
Output terminal of lock detection. It is the open drain output.
6
CK
I
Input terminal of clock.
7
DATA
I
Input terminal of data.
8
EN
I
Input terminal of enable signal.
9
BO
O
Output terminal of buffer amplifier. The signal of local oscillation is output through the
buffer amplifier.
10
OSCO
O
Output terminal of local oscillation signal.
11
OSCI
I
Input terminal of local oscillation signal.
In case of external input, connecting it to this terminal.
12
SW
O
Switch-over terminal for the time constant of loop filter. It is an open drain output.
If you don
’
t switch the time constant of loop filter, general output is available.
14
CP2
0
Output terminal of channel 2 charge pump. Charge pump is a constant current output
circuit, and the output current is selected by input serial data.
16
Fin2
I
Input terminal of channel 2 RF signal.
Characteristic
Symbol
Value
Unit
Power Supply Voltage
Vcc
6
V
Power Dissipation
P
D
T
OPR
T
STG
600
mW
Operating temperature
30 — + 5
°
C
Storage temperature
55 — +50
°
C
Take care ! ESD sensitive device
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