- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄40037 > S1PB (VISHAY SEMICONDUCTORS) 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA PDF資料下載
參數(shù)資料
| 型號(hào)： | S1PB |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA |
| 封裝： | PLASTIC, SMP, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 325K |
| 代理商： | S1PB |
www.vishay.com
2
Document Number 88917
10-Nov-05
S1PB thru S1PJ
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise specified)
Thermal Characteristics
(TA = 25 °C unless otherwise specified)
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. RθJC is mea-
sured at the terminal of cathode band. RθJC is measured at the top centre of the body
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise specified)
Parameter
Test Conditions
Symbol
Value
Unit
Maximum instantaneous forward voltage (1)
at IF = 1.0 A, TJ = 25 °C
at IF = 1.0 A, TJ = 125 °C
VF
1.1
0.95
V
Maximum reverse current at rated VR
(1) voltage
TJ = 25 °C
TJ = 125 °C
IR
1.0
50
A
Typical reverse recovery time
at = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.8
s
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
6.0
pF
Parameter
Symbol
S1PB
S1PD
S1PG
S1PJ
Unit
Typical thermal resistance (2)
RθJA
RθJL
RθJC
105
15
20
°C/W
Figure 1. Maximum Forward Current Derating Curve
0
1.2
80
90
100
110
120
130
140
150
A
v
erage
For
w
ard
Rectified
C
u
rrent
(A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
TL measured
at the cathode band terminal
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
Number of Cycles at 50 Hz
1
10
100
10
20
30
0
05
15
25
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1PD-E3 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PG-E3 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PG-HE3 | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PJ-HE3 | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-220AA |
| S1PD-HE3 | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1PB-E3/84A | 功能描述:整流器 1.0 Amp 100 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1PB-E3/85A | 功能描述:整流器 100 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1PBHE3/84A | 功能描述:整流器 100 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1PBHE3/85A | 功能描述:整流器 100 Volt 1.0 Amp 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1PBHM3/84A | 功能描述:整流器 100volt 1.0amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。