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參數(shù)資料
| 型號： | S1J-M3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | S1J-M3/61T |
Document Number: 89272
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A thru S1M
Vishay General Semiconductor
New Product
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
T
J = 25 °C
Pulse Width = 300 s
1 % Duty Cycle
0.4
100
1.6
2.0
0.8
1.2
Instantaneous Forward Voltage (V)
Instantaneous
F
o
rw
ard
Current
(A)
10
1
0.1
0.01
020
60
40
100
80
0.01
0.001
0.1
10
1
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous
Re
v
e
rse
Leakage
Current
(A)
Reverse Voltage (V)
Junction
Capacitance
(pF)
0.1
0.01
1
10
100
10
1
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
t - Pulse Duration (s)
Transient
Thermal
Impedance
(°C/W)
0.1
0.01
1
10
100
1000
10
1
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
S1A thru S1J
S1K, S1M
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
相關(guān)PDF資料 |
PDF描述 |
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| S1A-M3/61T | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1KB | 1 A, 800 V, SILICON, SIGNAL DIODE |
| S1D | 1 A, 200 V, SILICON, SIGNAL DIODE |
| S1A | 1 A, 50 V, SILICON, SIGNAL DIODE |
| S1KW32C-4D | 1.5 A, 32000 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1JS | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:1.0 AMP. Surface Mount Rectifiers |
| S1J-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| S1J-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| S1J-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 600V 1A 2-Pin SMB T/R |
| S1JTR | 功能描述:DIODE GEN PURP 600V 1A SMA 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:600V 電流 - 平均整流（Io）:1A 不同 If 時的電壓 - 正向（Vf）:1.1V @ 1A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時間（trr）:2.5μs 不同?Vr 時的電流 - 反向漏電流:5μA @ 600V 不同?Vr，F(xiàn) 時的電容:15pF @ 4V，1MHz 安裝類型:表面貼裝 封裝/外殼:DO-214AC，SMA 供應(yīng)商器件封裝:SMA（DO-214AC） 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:1 |
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