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參數(shù)資料
| 型號： | S1J-M3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | S1J-M3/61T |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89272
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 19-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A thru S1M
Vishay General Semiconductor
New Product
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.1
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
IR
1.0
5.0
μA
TA = 125 °C
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.8
μs
Typical junction capacitance
4.0 V, 1 MHz
CJ
12
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Typical thermal resistance (1)
RJA
75
85
°C/W
RJL
27
30
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1J-M3/61T
0.064
61T
1800
7" diameter plastic tape and reel
S1J-M3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
Resistive or Inductive Load
0
1.2
60
80
160
20
40
Lead Temperature (°C)
A
v
er
age
F
orw
ard
Current
(A)
120
140
100
1.0
0.8
0.6
0.4
0.2
0
0.2" x 0.2" (5.0 mm x 5.0 mm)
Thick Copper Pad Areas
S1A thru S1J
S1K, S1M
0
10
100
1
100
10
T
L = 110 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
e
ak
F
orw
ard
Surge
Current
(A)
S1A thru S1J
S1K, S1M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1A-M3/61T | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1KB | 1 A, 800 V, SILICON, SIGNAL DIODE |
| S1D | 1 A, 200 V, SILICON, SIGNAL DIODE |
| S1A | 1 A, 50 V, SILICON, SIGNAL DIODE |
| S1KW32C-4D | 1.5 A, 32000 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1JS | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:1.0 AMP. Surface Mount Rectifiers |
| S1J-T1 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| S1J-T3 | 制造商:WTE 制造商全稱:Won-Top Electronics 功能描述:1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER |
| S1J-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Switching 600V 1A 2-Pin SMB T/R |
| S1JTR | 功能描述:DIODE GEN PURP 600V 1A SMA 制造商:smc diode solutions 系列:- 包裝:剪切帶（CT） 零件狀態(tài):有效 二極管類型:標準 電壓 - DC 反向（Vr）（最大值）:600V 電流 - 平均整流（Io）:1A 不同 If 時的電壓 - 正向（Vf）:1.1V @ 1A 速度:標準恢復 >500ns，> 200mA（Io） 反向恢復時間（trr）:2.5μs 不同?Vr 時的電流 - 反向漏電流:5μA @ 600V 不同?Vr，F(xiàn) 時的電容:15pF @ 4V，1MHz 安裝類型:表面貼裝 封裝/外殼:DO-214AC，SMA 供應商器件封裝:SMA（DO-214AC） 工作溫度 - 結(jié):-65°C ~ 175°C 標準包裝:1 |
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