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參數(shù)資料
| 型號(hào)： | S1G |
| 廠(chǎng)商： | GENERAL SEMICONDUCTOR INC |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | PLASTIC, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 46K |
| 代理商： | S1G |
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.203) MAX.
0.194 (4.93)
0.208 (5.28)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (see fig.1)
IF(AV)
1.0
A
Peak forward surge current 8.3ms single half sine-wave
IFSM
40
30
A
superimposed on rated load (JEDEC Method) TL=110°C
Typical thermal resistance (NOTE 1)
R
ΘJA
75
85
R
ΘJL
27
30
°C/W
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Maximum instantaneous forward voltage at 1.0A
VF
1.10
V
Maximum DC reverse current
TA =25°C
1.0
5.0
at Rated DC blocking voltage
TA=125°C
IR
50
A
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
1.8
s
Typical junction capacitance at 4.0V, 1MHz
CJ
12
pF
Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on
P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
4/4/00
Dimensions in inches
and (millimeters)
S1A thru S1M
Surface Mount Glass Passivated Rectifier
Reverse Voltage 50 to 1000V
Forward Current 1.0A
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief, ideal for automated placement
Glass passivated chip junction
High temperature soldering:
250°C/10 seconds at terminals
Mechanical Data
Case: JEDEC DO-214AC molded plastic over
glass passivated chip
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.002 ounce, 0.064 gram
DO-214AC (SMA)
0.094 MAX.
(2.38 MAX.)
0.220
(5.58) REF
0.066 MIN.
(1.68 MIN.)
0.052 MIN.
(1.32 MIN.)
Mounting Pad Layout
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1D | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1K-LTP | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1J-LTP | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1A-LTP | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AA |
| S1NB20-4101 | 1 A, SILICON, BRIDGE RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1G R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 400V 1A 2-Pin SMA T/R |
| S1G(FCH) | 制造商:Fairchild Semiconductor Corporation 功能描述:DIODE SMD 1.0A 400V |
| S1G(GS) | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1.0A 400V |
| S1G | 制造商:Fairchild Semiconductor Corporation 功能描述:Diode |
| S1G/1 | 功能描述:DIODE 1A 400V SMA RoHS:否 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類(lèi)型:底座，接線(xiàn)柱安裝 封裝/外殼:DO-203AA，DO-4，接線(xiàn)柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱(chēng):*1N3879 |
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