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參數(shù)資料
| 型號： | S1G-E3/61T |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 87K |
| 代理商： | S1G-E3/61T |
S1A thru S1M
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88711
Revision: 07-Apr-08
2
Note:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.1
V
Maximum DC reverse current at
Rated DC blocking voltage
TA = 25 °C
TA= 125 °C
IR
1.0
5.0
A
50
Typical reverse recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
1.8
s
Typical junction capacitance
4.0 V, 1 MHz
CJ
12
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Typical thermal resistance (1)
RθJA
RθJL
75
27
85
30
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
REFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
S1J-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
S1J-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
S1JHE3/61T (1)
0.064
61T
1800
7" diameter plastic tape and reel
S1JHE3/5AT (1)
0.064
5AT
7500
13" diameter plastic tape and reel
Figure 1. Forward Current Derating Curve
Resistive or Inductive Load
S1(K, M)
S1(A - J)
0
1.2
60
80
160
20
40
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
120
140
100
1.0
0.8
0.6
0.4
0.2
0
0.2 x 0.2" (5.0 x 5.0 mm)
Thick Copper Pad Areas
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
0
10
100
1
100
10
T
L = 110 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
S1(A - J)
S1(K, M)
相關PDF資料 |
PDF描述 |
|---|---|
| S1K-E3/5AT | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1G-HE3/61T | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1A-HE3/61T | 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1B-E3/5AT | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1G-HE3/5AT | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| S1GHE3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Surface Mount Glass Passivated Rectifier |
| S1G-HE3/1 | 制造商:Vishay Intertechnologies 功能描述:Diode Switching 400V 1A 2-Pin SMA Bulk |
| S1GHE3/2GT | 功能描述:整流器 1.0 Amp 400 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1GHE3/5AT | 功能描述:整流器 1.0 Amp 400 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1GHE3/61T | 功能描述:整流器 1.0 Amp 400 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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