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參數(shù)資料
| 型號： | S1B-E3/5AT |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMA, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | S1B-E3/5AT |
S1A thru S1M
Vishay General Semiconductor
Document Number: 88711
Revision: 07-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Glass Passivated Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For
use
in
general
purpose
rectification
of
power
supplies,
inverters,
converters
and
freewheeling diodes for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 1000 V
IFSM
40 A, 30 A
EAS
5 mJ
IR
1.0 A, 5.0 A
VF
1.1 V
TJ max.
150 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Device marking code
SA
SB
SD
SG
SJ
SK
SM
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1G-HE3/5AT | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1GHE3/61T | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1GHE3/5AT | 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1B-E3/61T | 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC |
| S1M-HE3/5AT | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S1BHE3/2GT | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1BHE3/5AT | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1BHE3/61T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| S1BHE3_A/H | 制造商:Vishay Intertechnologies 功能描述:DIODE, Diode Type:Standard Recovery, Diode Configuration:Single, Repetitive Reve |
| S1BL | 功能描述:整流器 1A 100V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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