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參數(shù)資料
| 型號： | S1D2147A01-A0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DEFLECTION PROCESSOR FOR MULTISYNC MONITORS |
| 中文描述： | 偏轉(zhuǎn)處理器多同步監(jiān)測儀 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 132K |
| 代理商： | S1D2147A01-A0B0 |
DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
S1D2147A01
8
VERTICAL SECTION
OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(VCC = 12V, Tamb = 25
°
C)
Horizontal Drive High Level Output
Voltage (output on Pin 20)
HDem
Pin 21 to V
CC
,
I
OUT
= 20mA
9.5
10
V
X-RAY Protection Input Threshold
Voltage (Pin 16)
XRAYth
1.6
1.8
V
Maximum Output Current on Safety
Blanking Output
ISblkO
I
23
10
mA
Low-Level Voltage on Safety
Blanking output
VSblkO
V
23
with I
23
= 10mA
0.25
0.5
V
Internal Clamping Voltage on 2nd
PLL Loop Filter Output (Pin 1)
Vphi2
Vmin
Vmax
1.6
3.2
V
Pin2 Threshold Voltage to Stop
H-out, V-out
B+out and to Activate S-BLK
(OFF Mode when V
2
< V
OFF
)
V
OFF
V
2
1
V
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Vertical Sync Input Voltage (Pin 34)
VSVR
0
5.5
V
Table 3. Vertical Section Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Pin 23-28-29 bias current
(Currnt sourced by PNP base)
IBIASP
For V23-28-29 = 2V
2
°
C
Pin 31 bias Current
(Current sunk by PNP base)
IBIASN
For V31 = 6V
0.5
°
C
Vertical sync input threshold voltage
VSth
Pin 34; High-level
Low -level
2
0.8
V
V
Vertical sync input bias current
(Current sourced by PNP base)
VSBI
V34 = 0.8V
1
μ
A
Voltage at ramp bottom point
VRB
On Pin 27
2/8
VREF-V
Voltage at ramp top point (with sync)
VRT
On Pin 27
5/8
VREF-V
Voltage at ramp top point (without sync)
VRTF
On Pin 27
VRT-0.1
V
Table 2. Horizontal Section Electrical Characteristics (Continued)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
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