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參數(shù)資料
| 型號： | S1D2147A01-A0B0 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | DEFLECTION PROCESSOR FOR MULTISYNC MONITORS |
| 中文描述： | 偏轉(zhuǎn)處理器多同步監(jiān)測儀 |
| 文件頁數(shù)： | 11/14頁 |
| 文件大?。?/td> | 132K |
| 代理商： | S1D2147A01-A0B0 |
DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
S1D2147A01
10
B+ SECTION
OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(V
CC
= 12V, Tamb = 25
°
C)
EAST/WEST PARABOLA GENERATOR
ELECTRICAL CHARACTERISTICS
(VCC = 12V, Tamb = 25
°
C)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Maximum Error Amplifier Output
Current
EAOI
Source by pin 14
Sunk by pin 41
0.5
2
mA
mA
Minimum Feedback Resistor
FeedRes Resistor between pins 40 and 41
5
k
Table 4. B+ Section Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Error Amplifier Open loop gain
OLG
At low frequency
see
(
1
)
85
dB
Unity gain bandwidth
UGBW
see
(1)
6
MHz
Regulation input bias current
IRI
Current sourced by
pin 40 (PNP base)
0.2
μ
A
Maximum guaranted error amplifier
output current
EAOI
Current sourced by pin 41
Current sink by pin 41
0.5
2
mA
mA
Current Sense Input Voltage Gain
CSG
Pin 42
3
Max Current Sense Input Threshold
Votlage
MCEth
Pin 42
1.2
V
Current Sense Input Bias Current
ISI
Current sunk by pin 42
(NPN base)
1
μ
A
Maximum External Power Transistor
on Time
Tonmax
% of H-period
@ f0 = 27kHz
75
%
B+ Output Low Level Saturation
voltage
B+OSV
V
22
with I
22
= 10mA
0.25
V
Internal Reference voltage
IVref
On error amp (+) input for V
39
= 4V
4.9
V
Internal Reference Voltage Adjustment
V
RERADJ
2V < V39 < 6V
±
14
%
Table 5. East/West Parabola Generator Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Parabola symetry adjustment capability
(for Keystone adjustment; with pin 38)
Vsym
See figure 2; Internal voltage
V38 = 2V
V38 = 4V
V38 = 6V
3.2
3.5
3.8
V
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