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參數(shù)資料
| 型號(hào)： | S17NF3LL |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 30V - 0.0045ohm - 17A - SO-8 STripFET II Power MOSFET for DC-DC conversion |
| 中文描述： | N溝道30V的- 0.0045ohm - 17A條-的SO - 8 STripFET二功率MOSFET的DC - DC轉(zhuǎn)換 |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大小： | 309K |
| 代理商： | S17NF3LL |
Electrical characteristics
STS17NF3LL
4/12
2
(T
CASE
=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250
μ
A, V
GS
=0
30
V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= max rating
V
DS
=max rating,
T
C
= 125°C
1
10
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 18V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, I
D
= 8.5A
0.0045
0.0055
0.0055
0.007
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
g
fs (1)
1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Forward
transconductance
V
DS
= 10V, I
D
= 8.5A
37
S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
2160
614
98
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 15V, I
D
= 8.5A
R
G
= 4.7
V
GS
= 4.5V
(see
Figure 13
)
23.5
39
47.5
37
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 24V, I
D
= 12.5A,
V
GS
= 4.5V, R
G
= 4.7
(see
Figure 14
)
26
7
12
35
nC
nC
nC
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