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參數(shù)資料
| 型號： | S1B |
| 廠商： | Won-Top Electronics Co., Ltd. |
| 英文描述： | 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE |
| 中文描述： | 安培表面貼裝玻璃鈍化標(biāo)準(zhǔn)二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 49K |
| 代理商： | S1B |
S1A – S1M
1 of 4 2006 Won-Top Electronics
Pb
S1A – S1M
1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE
Features
!
Glass Passivated Die Construction
!
Ideally Suited for Automatic Assembly B
!
Low Forward Voltage Drop
!
Surge Overload Rating to 30A Peak D
!
Low Power Loss A
!
Built-in Strain Relief F
!
Plastic Case Material has UL Flammability
Classification Rating 94V-O C H G
E
Mechanical Data
!
Case: SMB/DO-214AA, Molded Plastic
!
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
!
Polarity: Cathode Band or Cathode Notch
!
Marking: Type Number
!
Weight: 0.093 grams (approx.)
!
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Symbol
S1A
S1B
S1D
S1G
S1J
S1K
S1M
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current @T
L
= 100°C
I
O
1.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I
FSM
30
A
Forward Voltage @I
F
= 1.0A
V
FM
1.10
V
Peak Reverse Current @T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 125°C
I
RM
5.0
200
μA
Reverse Recovery Time (Note 1)
t
rr
2.5
μS
Typical Junction Capacitance (Note 2)
C
j
15
pF
Typical Thermal Resistance (Note 3)
R
JL
30
°C/W
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +175
°C
Note: 1. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm
2
land area.
WTE
POWER SEMICONDUCTORS
SMB/DO-214AA
Min
3.30
4.06
1.91
0.152
5.08
2.13
0.051
0.76
All Dimensions in mm
Dim
A
B
C
D
E
F
G
H
Max
3.94
4.70
2.11
0.305
5.59
2.44
0.203
1.27
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S1D | 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE |
| S1G | 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE |
| S1J | 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE |
| S1K | 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE |
| S1M | 1.0A SURFACE MOUNT GLASS PASSIVATED STANDARD DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S-1B | 制造商:Nihon Kaiheiki Ind Co Ltd 功能描述:30V 50000(@BIv) / 25000(dCIv) bL +85 -30 Bulk |
| S1-B | 制造商:Multi-Contact 功能描述: |
| S1B R2 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R 制造商:Taiwan Semiconductor 功能描述:Diode Switching 100V 1A 2-Pin SMA T/R |
| S1B | 制造商:Vishay Semiconductors 功能描述:DIODE SMD 1.0A 100V |
| S1B/11T | 功能描述:整流器 1.0 Amp 100 Volt 40A IFSM @ 8.3ms RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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