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參數(shù)資料
| 型號： | S10043 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Highly reliable photodiode for VUV detection |
| 中文描述： | 高度可靠的光電二極管的真空紫外檢測 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 51K |
| 代理商： | S10043 |
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2006 Hamamatsu Photonics K.K.
Cat. No. KSPD1072E01
Jun. 2006
DN
Si photodiode
S10043
WAVELENGTH (nm)
0
100
400
700
200
500
800
300
600
900 1000
(Typ. Ta=25 C)
0.20
0.25
0.10
0.15
0.05
P
I
Spectral response
KSPDB0257EA
I
Dimensional outline (unit: mm)
EXPOSURE (kJ/cm
2
)
600
0.2
0.4
0.6
0.8
1
(Typ.
λ
=193 nm)
105
65
70
75
80
85
90
95
100
R
S8552
(CONVENTIONAL
TYPE)
S10043
I
Sensitivity change after exposure to ArF laser
KSPDB0258EA
I
Handling precautions
G
Handle the photodiodes in a clean room.
G
Never touch the photodiode chip surface and wire bonding.
G
Wear dust-proof gloves and dust-proof mask.
G
Use an air dust cleaner to blow away dust and foreign matter on the photodiode chip surface.
G
Do not clean the photodiodes by any method other than air blow.
ANODE
TERMINAL MARK
PHOTOSENSITIVE
SURFACE
0
0
16.5 ± 0.2
Y
X
1
2
(
15.1 ± 0.3
12.5 ± 0.2
1
ACTIVE AREA
10
×
10
(2
×
) 0.5
Fe
·
Ni
·
Co ALLOY
Chip position accuracy
with respect to the package center
-0.3
≤
X, Y
≤
+0.3
BLACK CERAMIC
TAPE
KSPDA0171EA
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