參數(shù)資料
型號: S-8521F32MC-BPR-T2G
元件分類: 穩(wěn)壓器
英文描述: 0.05 A SWITCHING CONTROLLER, 360 kHz SWITCHING FREQ-MAX, PDSO5
封裝: LEAD FREE, SOT-23, 5 PIN
文件頁數(shù): 11/44頁
文件大?。?/td> 511K
代理商: S-8521F32MC-BPR-T2G
STEP-DOWN, PWM CONTROL or PWM / PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER
Rev.9.0_00
S-8520/8521 Series
Seiko Instruments Inc.
19
5.
External transistor
Enhancement (Pch) MOS FET or bipolar (PNP) MOS FET can be used for external transistor.
5. 1
Enhancement (Pch) MOS FET type
The EXT pin of the S-8520/8521 Series is capable of directly driving a Pch MOS FET with a gate capacity
around 1000 pF.
When using a Pch MOS FET, 2 to 3% higher efficiency is provided because its switching speed is faster and it
does not cause power dissipation, compared to PNP bipolar transistors.
The important parameters in selecting MOS FETs are the threshold voltage, the breakdown voltage between
gate and source, the breakdown voltage between drain and source, the total gate capacity, the on-resistance,
and the current ratings.
The EXT pin swings from voltages between VIN to VSS. If the input voltage is low, use a MOS FET with the low
threshold voltage. If the input voltage is high, use a MOS FET having the breakdown voltage between gate and
source higher several volts than the input voltage.
Immediately after the power-on or power-off (stopping the step-down operation), the input voltage will be applied
between drain and source of the MOS FET. Use the breakdown voltage between drain and source also higher
several volts than the input voltage.
The total gate capacity and the on-resistance affect efficiency.
Power dissipation when charging and discharging the gate capacity by switching operation affects efficiency, in
the area of low load current, as the total gate capacity is larger and the input voltage is higher. Select a MOS
FET with a small total gate capacity for efficiency at light load.
In the area of large load current, efficiency is affected by power dissipation caused by MOS FET’s on-resistance.
For efficiency at large load, select a MOS FET having as low on-resistance as possible.
As for the current rating, select a MOS FET having the maximum continuous drain current rating higher than IPK.
For reference, this document has the data of efficiency. TM6201 by Toyota Industries Corporation for
applications with an input voltage of 10 V or less, IRF7606 by International Rectifier Corporation Japan for
applications with an input voltage over 10 V (Refer to “
Reference Data”).
相關(guān)PDF資料
PDF描述
S-80160BLMC-JFLT2U 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
S-80160CLMC-JJLT2U 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
S-8353J25MC-IYKT2U SWITCHING REGULATOR, 287.5 kHz SWITCHING FREQ-MAX, PDSO5
S-80810CNPF-B9OTFU 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
SMHF2815D/HR 2-OUTPUT 15 W DC-DC REG PWR SUPPLY MODULE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S-8521F33MC-BPS-T2 功能描述:DC/DC 開關(guān)控制器 3.3V Step-Dn PWM/PFM RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
S-8521F33MC-BPST2G 功能描述:DC/DC 開關(guān)控制器 3.3V Step-Dn PWM/PFM RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
S-8521F34MC-BPTT2G 功能描述:DC/DC 開關(guān)控制器 Step Down SWR PWM/ PFM 300kHz 100uA Iq RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
S-8521F36MC-BPVT2G 功能描述:DC/DC 開關(guān)控制器 StepDOWN SWR PWM/PFM 300kHz 100uA Iq RoHS:否 制造商:Texas Instruments 輸入電壓:6 V to 100 V 開關(guān)頻率: 輸出電壓:1.215 V to 80 V 輸出電流:3.5 A 輸出端數(shù)量:1 最大工作溫度:+ 125 C 安裝風(fēng)格: 封裝 / 箱體:CPAK
S-8521F38MC-BPXT2U 功能描述:IC REG CTRLR BUCK SOT23-5 制造商:ablic u.s.a. inc. 系列:- 包裝:剪切帶(CT) 零件狀態(tài):在售 輸出類型:晶體管驅(qū)動器 功能:降壓 輸出配置:正 拓?fù)?降壓 輸出數(shù):1 輸出階段:1 電壓 - 電源(Vcc/Vdd):2.5 V ~ 16 V 頻率 - 開關(guān):300kHz 占空比(最大):1 同步整流器:無 時鐘同步:無 串行接口:- 控制特性:使能 工作溫度:-40°C ~ 85°C(TA) 封裝/外殼:SC-74A,SOT-753 供應(yīng)商器件封裝:SOT-23-5 標(biāo)準(zhǔn)包裝:1