參數(shù)資料
型號: S-8357G33MC-MIST2U
元件分類: 穩(wěn)壓器
英文描述: SWITCHING CONTROLLER, 345 kHz SWITCHING FREQ-MAX, PDSO5
封裝: HALOGEN FREE AND LEAD FREE, SOT-23, 5 PIN
文件頁數(shù): 26/77頁
文件大?。?/td> 836K
代理商: S-8357G33MC-MIST2U
STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER
S-8355/56/57/58 Series
Rev.7.0_00
Seiko Instruments Inc.
32
4.2 Bipolar (NPN) Type
A circuit example using the CPH3210 (hFE = 200 to 560) from Sanyo Electric Co., Ltd. As a bipolar transistor
(NPN) is shown in Figure 20 to 25 in the “
Standard Circuits”. The hFE value and Rb value of the bipolar
transistor determine the driving capacity to increase the output current using a bipolar transistor. A peripheral
circuit example of the transistor is shown in Figure 19.
Nch
Pch
VOUT
*1
IPK
EXT
Cb
2200 pF
Rb
1 k
Ω
*1. VDD for E, G, J, K, L, M, P and Q types.
Figure 19 External Transistor Peripheral Circuit
The recommended Rb value is around 1 kΩ. Actually, calculate the necessary base current (Ib) from the bipolar
transistor (hFE) using
FE
PK
b
h
I
=
, and select the smaller Rb value than
EXTH
b
OUT
b
I
4
.
0
I
7
.
0
V
R
=
*1.
A small Rb value can increase the output current, but the efficiency decreases. Since a current may flow on the
pulse and the voltage may drop due to wiring resistance or other factors in the actual circuit, therefore the
optimum Rb value should be determined by experiment.
Connecting the speed-up capacitor (Cb) in parallel with the Rb resistance as shown in Figure 19, decreases
switching loss and improves the efficiency.
The Cb value is calculated according to
7
.
0
f
R
π
2
1
C
osc
b
.
Select a Cb value after performing sufficient evaluation since the optimum Cb value differs depending upon the
characteristics of the bipolar transistor.
*1.
For E, G, J, K, L, M, P and Q type,
EXTH
b
DD
b
I
4
.
0
I
7
.
0
V
R
=
.
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