參數(shù)資料
型號(hào)： S-8357G33MC-MIST2U
元件分類(lèi)： 穩(wěn)壓器
英文描述： SWITCHING CONTROLLER, 345 kHz SWITCHING FREQ-MAX, PDSO5
封裝： HALOGEN FREE AND LEAD FREE, SOT-23, 5 PIN
文件頁(yè)數(shù)： 25/77頁(yè)
文件大?。?/td> 836K
代理商： S-8357G33MC-MIST2U
STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER
Rev.7.0_00
S-8355/56/57/58 Series
Seiko Instruments Inc.
31
3. Capacitor (CIN, CL)
A capacitor on the input side (CIN) improves the efficiency by reducing the power impedance and stabilizing the input
current. Select a CIN value according to the impedance of the power supply used.
A capacitor on the output side (CL) is used for smoothing the output voltage. For step-up types, the output voltage
flows intermittently to the load current, so step-up types need a larger capacitance than step-down types. Therefore,
select an appropriate capacitor in accordance with the ripple voltage, which increases in case of a higher output
voltage or a higher load current. The capacitor value should be 10
μF or more.
Select an appropriate capacitor the equivalent series resistance (RESR) for stable output voltage. The stable voltage
range in this IC depends on the RESR. Although the inductance value (L value) is also a factor, an RESR of 30 to 500
m
Ω maximizes the characteristics. However, the best RESR value may depend on the L value, the capacitance, the
wiring, and the applications (output load). Therefore, fully evaluate the RESR under the actual operating conditions to
determine the best value.
Refer to the “3. Example of Ceramic Capacitor Application” (Figure 27) in the “
Application Circuit” for the
circuit example using a ceramic capacitor and the external resistance of the capacitor (RESR).
4. External Transistor
An enhancement (N-channel) MOS FET type or A bipolar (NPN) type can be used as the external transistor.
4.1 Enhancement (N-channel) MOS FET Type
Figure 18 is a circuit example using a MOS FET transistor (N-channel).
VOUT
EXT
VOUT
+
OFF
/
ON
*2
VSS
VDD
*1
+
*1. For VDD / VOUT separate type.
*2. With shutdown function.
Figure 18 Circuit Example Using MOS FET (N-channel) Type
An N-channel power MOS FET should be used for the MOS FET. Because the gate voltage and current of the
external power MOS FET are supplied from the stepped-up output voltage (VOUT), the MOS FET is driven more
effectively.
A large current may flow during startup, depending on the MOS FET selection. So perform sufficient evaluation
using the actual devices. Also recommend to use a MOS FET with an input capacitance of 700 pF or less.
Since the ON-resistance of the MOS FET might depend on the difference between the output voltage (VOUT) and
the threshold voltage of the MOS FET, and affect the output current as well as the efficiency, the threshold
voltage should be low. When the output voltage is low, the circuit operates only when the MOS FET has a
threshold voltage lower than the output voltage.
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