參數(shù)資料
型號: S-1009N28I-M5T1U
元件分類: 電源管理
英文描述: 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
封裝: HALOGEN AND LEAD FREE, SOT-23, 5 PIN
文件頁數(shù): 37/38頁
文件大?。?/td> 493K
代理商: S-1009N28I-M5T1U
SUPER-LOW CURRENT CONSUMPTION SUPER HIGH-ACCURACY VOLTAGE DETECTOR WITH DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING)
S-1009 Series
Rev.4.2_00
Seiko Instruments Inc.
8
Electrical Characteristics
1. Nch open drain output products
Table 6
(Ta =
+25°C unless otherwise specified)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
Test
Circuit
0.8 V
≤ VDET < 2.4 V
VDET(S)
0.012
VDET(S)
+ 0.012
V
1
Detection voltage
*1
VDET
2.4 V
≤ VDET ≤ 4.6 V
VDET(S)
× 0.995
VDET(S)
× 1.005
V
1
Hysteresis width
VHYS
VDET
× 0.04
VDET
× 0.05
VDET
× 0.06
V
1
0.8 V
≤ VDET < 1.2 V
0.30
0.90
μA
2
1.2 V
≤ VDET < 2.3 V
0.27
0.90
μA
2
2.3 V
≤ VDET < 3.6 V
0.42
0.90
μA
2
Current
consumption
ISS
VDD =
+VDET + 0.6 V
3.6 V
≤ VDET ≤ 4.6 V
0.39
0.90
μA
2
Operating voltage
VDD
0.7
10.0
V
1
VDD = 0.7 V
S-1009N08 to 14
0.14
0.40
mA
3
VDD = 1.2 V
S-1009N15 to 46
0.73
1.33
mA
3
Output current
IOUT
Output transistor,
Nch,
VDS = 0.5 V
VDD = 2.4 V
S-1009N27 to 46
1.47
2.39
mA
3
Leakage current
ILEAK
Output transistor, Nch,
VDD = 10.0 V, VOUT = 10.0 V
0.08
μA
3
Delay time
tD
CD = 4.7 nF
22.1
26.0
29.9
ms
4
0.8 V
≤ VDET < 0.9 V
±180
±430 ppm/°C
1
0.9 V
≤ VDET < 1.2 V
±120
±370 ppm/°C
1
Detection voltage
temperature
coefficient
*2
ΔVDET
ΔTa VDET Ta = 40°C to +85°C
1.2 V
≤ VDET ≤ 4.6 V
±100
±350 ppm/°C
1
*1.
VDET: Actual detection voltage value, VDET(S): Specified detection voltage value (The center value of the detection
voltage range in Table 1.)
*2.
The temperature change of the detection voltage [mV/°C] is calculated by using the following equation.
Δ VDET
ΔTa
[]
mV/°C
*1 = VDET(S)(typ.)[]
V
*2 ×
Δ VDET
ΔTa VDET []
ppm/°C
*3 ÷ 1000
*1. Temperature change of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
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