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參數(shù)資料
| 型號(hào)： | RZ1214B65Y_3 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN Microwave power transistor(NPN 微波功率晶體管) |
| 中文描述： | npn型微波功率晶體管（npn型微波功率晶體管） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 57K |
| 代理商： | RZ1214B65Y_3 |
1999 Dec 24
2
Philips Semiconductors
Product specification
NPN microwave power transistor
RZ1214B65Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistor providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Internal input and output matching ensures good
stability and allows an easier design of wideband
circuits.
APPLICATIONS
Intended for use in common base class C wideband
pulsed power amplifiers for L-band radar applications in
the 1.2 to 1.4 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT443A metal ceramic flange package with the base
connected to the flange.
PINNING - SOT443A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common base class-C wideband amplifier.
MODE OF OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
≥
70
G
p
(dB)
≥
7
η
C
(%)
≥
35
Z
i
; Z
L
(
)
see Fig 4
Class-C; t
p
= 150
μ
s;
δ
= 5%
1.2 to 1.4
50
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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