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參數(shù)資料
| 型號(hào)： | RX1214B170W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Microwave power transistor(微波功率晶體管) |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-439A, 3 PIN |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 74K |
| 代理商： | RX1214B170W |
1997 Feb 18
2
Philips Semiconductors
Product specification
Microwave power transistor
RX1214B170W
FEATURES
Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure provides high emitter
efficiency
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power
sharing and reduces thermal
resistance
Internal input and output
prematching networks allow an
easier design of circuits.
APPLICATIONS
Intended for use in common-base
class C broadband pulsed power
amplifiers for radar applications in the
1.2 to 1.4 GHz band. Also suitable for
long pulse, heavy duty operation
within this band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common base class C
narrowband amplifier.
PINNING - SOT439A
MODE OF
OPERATION
CONDITIONS
f
(GHz)
V
CC
(V)
P
L
(W)
≥
170
G
p
(dB)
≥
6.7
η
C
(%)
≥
40
Class C
t
p
= 500
μ
s;
δ
= 10%
1.2 to 1.4
42
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
ok, 4 columns
e
c
b
MAM045
1
2
Top view
3
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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| RX1214B300Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| RX1214B300Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| RX1214B300Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| RX1214B350Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| RX1214B80W | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistors |
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