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參數資料
| 型號： | RNA50C27AUS |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | CMOS System-Reset IC |
| 中文描述： | 的CMOS系統(tǒng)復位IC |
| 文件頁數： | 4/8頁 |
| 文件大小： | 91K |
| 代理商： | RNA50C27AUS |
RNA50C27AUS
Rev.1.00 Apr 10, 2006 page 4 of 7
Electrical Characteristics
DC Characteristics
(VDD33 = 3.3 V, VDD18 = 1.8 V, Ta = 25°C, CRext:R = 10 k
)
Min
Typ
Max
0.75
1.5
4
0.25
0.5
2
Typ
×
0.99
2.7
Typ
×
1.01
1.2
—
—
—
—
0.55
—
±
100
—
Item
Symbol
IDD33
IDD18
VTH33
VTH
H
VTH
L
Unit
μ
A
Test Conditions
All outputs are open
Quiescent supply current
Detection voltage
V
Detection voltage temperature
dependency
Detection voltage hysteresis
Low-level input voltage
High-level input voltage
internal pull-up resistance
Low-level output current
CMOS
*
1
High-level output current
RESP
Output leakage current
RESN
Output leakage current
High-level output voltage
Output source current
Low-level output voltage
Output sink current
Note: When the voltage within V
IL
< V
IN
< V
IH
is applied to MR and VDD18 input by DC, oscillation may occur.
1. When RESP output and RESN short out and CMOS output is used.
Vth33
Vth
Ta
V
HYS
V
IL
V
IH
R
MR
I
OL
I
OH
I
LEAK
I
LEAK
V
OH
I
OH
V
OL
I
OL
ppm/°C
VTH33
×
3%
—
VTH33
×
0.75
—
7.5
5
—
—
1.7
1.5
—
0.2
VTH33
×
5%
—
—
T.B.D.
15
10
—
—
—
3
—
0.35
VTH33
×
8%
VTH33
×
0.25
—
—
30
20
0.1
0.1
—
6
0.1
0.55
V
V
V
k
mA
V
O
= 0.5 V
V
O
= VDD33 – 0.5 V
RESN off
RESP off
V
O
= open
V
O
= VDD33 – 0.5 V
V
O
= open
V
O
= 0.5 V
MR
μ
A
μ
A
V
mA
V
mA
SWG
AC Characteristics
Item
Symbol
tp
LH
tp
HL
t
r
t
f
tp
LH
tp
HL
t
r
t
f
tp
LH
tp
HL
t
r
t
f
t
DLY
Min
—
—
—
—
—
—
—
—
—
T.B.D.
T.B.D.
T.B.D.
—
Typ
50
5
5
5
50
1.5
5
5
50
1.5
1.0
7.6
93
Max
400
T.B.D.
T.B.D.
T.B.D.
400
T.B.D.
T.B.D.
T.B.D.
400
T.B.D.
T.B.D.
T.B.D.
—
Unit
μ
s
Test Conditions
C
L
= 15 pF,
CRext:C = open
Propagation delay time
ns
μ
s
μ
s
RESP
Response time
C
L
= 15 pF
Propagation delay time
C
L
= 15 pF,
CRext:C = open
μ
s
ns
μ
s
RESN
Response time
C
L
= 15 pF
Propagation delay time
SWG
Response time
μ
s
C
L
= 2200 pF
Delay time
ms
CRext:C = 0.1
μ
F,
R = 1 M
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