參數(shù)資料
型號(hào)： RN4962FE
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
中文描述： 東芝晶體硅npn型·進(jìn)步黨外延型（厘進(jìn)程）（偏置電阻內(nèi)置晶體管）
文件頁(yè)數(shù)： 3/4頁(yè)
文件大?。?/td> 94K
代理商： RN4962FE
RN4962FE
2002-01-31
3
Electrical Characteristics
(Ta 25°C) (Q1)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
50 V, I
E
0
100
Collector cut-off current
I
CEO
V
CE
50 V, I
B
0
500
nA
Emitter cut-off current
I
EBO
V
EB
10 V, I
C
0
0.38
0.71
mA
DC current gain
h
FE
V
CE
5 V, I
C
10 mA
50
Collector-emitter saturation voltage
V
CE (sat)
I
C
5 mA, I
B
0.25 mA
0.1
0.3
V
Input voltage (ON)
V
I (ON)
V
CE
0.2 V, I
C
5 mA
1.2
2.4
V
Input voltage (OFF)
V
I (OFF)
V
CE
5 V, I
C
0.1 mA
1.0
1.5
V
Transition frequency
f
T
V
CE
50 V, I
C
0
250
MHz
Collector output capacitance
C
ob
V
CB
50 V, I
E
0, f 1 MHz
3
6
pF
Electrical Characteristics
(Ta 25°C) (Q2)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
50 V, I
E
0
100
Collector cut-off current
I
CEO
V
CE
50 V, I
B
0
500
nA
Emitter cut-off current
I
EBO
V
EB
10 V, I
C
0
0.38
0.71
mA
DC current gain
h
FE
V
CE
5 V, I
C
10 mA
50
Collector-emitter saturation voltage
V
CE (sat)
I
C
5 mA, I
B
0.25 mA
0.1
0.3
V
Input voltage (ON)
V
I (ON)
V
CE
0.2 V, I
C
5 mA
1.2
2.4
V
Input voltage (OFF)
V
I (OFF)
V
CE
5 V, I
C
0.1 mA
1.0
1.5
V
Transition frequency
f
T
V
CE
50 V, I
C
0
200
MHz
Collector output capacitance
C
ob
V
CB
50 V, I
E
0, f 1 MHz
3
6
pF
Electrical Characteristics
(Ta 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
7
10
13
k
Resistor ratio
R1/R2
0.9
1.0
1.1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN4981 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
RN4981(T5L,F,T) 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50volts 6Pin 4.7K x 4.7Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
RN4981AFS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN4981FE 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN4981FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
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