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參數(shù)資料
| 型號： | RN2910 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| 中文描述： | 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 177K |
| 代理商： | RN2910 |
RN2910,RN2911
2001-06-07
2
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
―
V
EB
=
5V, I
C
= 0
―
―
100
nA
DC current gain
h
FE
―
V
CE
=
5V, I
C
=
1mA
120
―
400
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
=
5mA, I
B
=
0.25mA
―
0.1
0.3
V
Translation frequency
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector output capacitance
C
ob
―
V
CB
=
10V, I
E
= 0V, f = 1MHz
―
3
6
pF
RN2910
3.29
4.7
6.11
Input resistor
RN2911
―
―
―
7
10
13
k
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| RN2910AFS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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| RN2910FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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