參數(shù)資料
型號: RN2910
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進步黨(厘進程)
文件頁數(shù): 1/6頁
文件大小: 177K
代理商: RN2910
RN2910,RN2911
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2910,RN2911
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1910, RN1911
Equivalent Circuit
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
* :
Total rating
Equivalent Circuit
(Top View)
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
Unit: mm
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