- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381068 > RN2909FE (Toshiba Corporation) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) PDF資料下載
參數(shù)資料
| 型號： | RN2909FE |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| 中文描述： | 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程）（偏置電阻內(nèi)置晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 188K |
| 代理商： | RN2909FE |
RN2907~RN2909
2001-02-08 2/5
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2907~2909
V
CEO
50
V
RN2907
6
RN2908
7
Emitter-base voltage
RN2909
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2907~2909
T
stg
55~150
C
* :
Total rating
Electrical Characteristics
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Typ.
Max
Unit
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
100
nA
Collector cut-off
current
RN2907~2909
I
CEO
―
V
CE
=
50V, I
B
= 0
―
―
500
nA
RN2907
―
V
EB
=
6V, I
C
= 0
0.081
―
0.15
RN2908
―
V
EB
=
7V, I
C
= 0
0.078
―
0.145
Emitter cut-off
current
RN2909
I
EBO
―
V
EB
=
15V, I
C
= 0
0.167
―
0.311
mA
RN2907
―
80
―
―
RN2908
―
80
―
―
DC current gain
RN2909
h
FE
―
V
CE
=
5V, I
C
=
10mA
70
―
―
―
Collector-emitter
saturation voltage
RN2907~2909
V
CE (sat)
―
I
C
=
B
=
0.25mA
―
0.1
0.3
V
RN2907
―
0.7
―
1.8
RN2908
―
1.0
―
2.6
Input voltage (ON)
RN2909
V
I (ON)
―
V
CE
=
0.2V, I
C
=
5mA
2.2
―
5.8
V
RN2907
―
0.5
―
1.0
RN2908
―
0.6
―
1.16
Input voltage (OFF)
RN2909
V
I (OFF)
―
V
CE
=
5V, I
C
=
0.1mA
1.5
―
2.6
V
Translation
frequency
RN2907~2909
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector output
capacitance
RN2907~2909
C
ob
―
V
CB
=
10V, I
E
= 0,
f = 1MHz
―
3
6
pF
RN2907
―
7
10
13
RN2908
―
15.4
22
28.6
Input resistor
RN2909
R1
―
―
32.9
47
61.1
k
RN2907
―
0.191
0.213
0.232
RN2908
―
0.421
0.468
0.515
Resistor ratio
RN2909
R1/R2
―
―
1.92
2.14
2.35
―
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN2910 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2911 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN4605 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4606 | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| RN4607 | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN2909FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2910 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| RN2910AFS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2910FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2910FS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。