參數(shù)資料
型號(hào): RN2908FE
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
中文描述: 東芝晶體硅外延式進(jìn)步黨(厘進(jìn)程)(偏置電阻內(nèi)置晶體管)
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 188K
代理商: RN2908FE
RN2907~RN2909
2001-02-08 2/5
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2907~2909
V
CEO
50
V
RN2907
6
RN2908
7
Emitter-base voltage
RN2909
V
EBO
15
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2907~2909
T
stg
55~150
C
* :
Total rating
Electrical Characteristics
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
=
50V, I
E
= 0
100
nA
Collector cut-off
current
RN2907~2909
I
CEO
V
CE
=
50V, I
B
= 0
500
nA
RN2907
V
EB
=
6V, I
C
= 0
0.081
0.15
RN2908
V
EB
=
7V, I
C
= 0
0.078
0.145
Emitter cut-off
current
RN2909
I
EBO
V
EB
=
15V, I
C
= 0
0.167
0.311
mA
RN2907
80
RN2908
80
DC current gain
RN2909
h
FE
V
CE
=
5V, I
C
=
10mA
70
Collector-emitter
saturation voltage
RN2907~2909
V
CE (sat)
I
C
=
5mA, I
B
=
0.25mA
0.1
0.3
V
RN2907
0.7
1.8
RN2908
1.0
2.6
Input voltage (ON)
RN2909
V
I (ON)
V
CE
=
0.2V, I
C
=
5mA
2.2
5.8
V
RN2907
0.5
1.0
RN2908
0.6
1.16
Input voltage (OFF)
RN2909
V
I (OFF)
V
CE
=
5V, I
C
=
0.1mA
1.5
2.6
V
Translation
frequency
RN2907~2909
f
T
V
CE
=
10V, I
C
=
5mA
200
MHz
Collector output
capacitance
RN2907~2909
C
ob
V
CB
=
10V, I
E
= 0,
f = 1MHz
3
6
pF
RN2907
7
10
13
RN2908
15.4
22
28.6
Input resistor
RN2909
R1
32.9
47
61.1
k
RN2907
0.191
0.213
0.232
RN2908
0.421
0.468
0.515
Resistor ratio
RN2909
R1/R2
1.92
2.14
2.35
相關(guān)PDF資料
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