參數(shù)資料
型號(hào): RN2426
廠商: Toshiba Corporation
英文描述: PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)
中文描述: 進(jìn)步黨外延型(開關(guān),逆變器電路,接口電路及驅(qū)動(dòng)電路的應(yīng)用)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 332K
代理商: RN2426
RN2421~RN2427
2001-11-29
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2421,RN2422,RN2423,RN2424
RN2425,RN2426,RN2427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
High current type (I
C(MAX)
=
800mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low V
CE (sat)
Complementary to RN
1
42
1
~RN
1
427
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
(Ta = 25 C)
Characteristics
Symbol
Rating
Unit
Collector-Base voltage
V
CBO
50
V
Collector-Emitter voltage
RN2421~2427
V
CEO
50
V
RN2421~2424
10
RN2425, 2426
5
Emitter-Base voltage
RN2427
V
EBO
6
V
Collector current
I
c
800
mA
Collector power dissipation
P
c
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN2421~2427
T
stg
55~150
C
Unit: mm
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Type No.
R1 (k
)
R2 (k
)
RN2421
1
1
RN2422
2.2
2.2
RN2423
4.7
4.7
RN2424
10
10
RN2425
0.47
10
RN2426
1
10
RN2427
2.2
10
相關(guān)PDF資料
PDF描述
RN2427 PNP EPITAXIAL TYPE (SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS)
RN2510 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2511 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2603 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2604 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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