參數(shù)資料
型號: RN2112FT
廠商: Toshiba Corporation
英文描述: IGBT Modules up to 600V Dual; Package: PG-LQFP-64; Max Clock Frequency: 40.0 MHz; SRAM (incl. Cache): 8.0 KByte; CAN Nodes: 2; A / D input lines (incl. FADC): 14; Program Memory: 128.0 KByte;
中文描述: 東芝晶體硅外延式進步黨(厘進程)(偏置電阻內(nèi)置晶體管)
文件頁數(shù): 2/3頁
文件大?。?/td> 84K
代理商: RN2112FT
RN2112FT,RN2113FT
2002-01-24
2
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
50 V, I
E
0
100
nA
Emitter cut-off current
I
EBO
V
EB
5 V, I
C
0
100
nA
DC current gain
h
FE
V
CE
5 V, I
C
1 mA
120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
5 mA, I
B
0.25 mA
0.1
0.3
V
Transition frequency
f
T
V
CE
10 V, I
C
5 mA
200
MHz
Collector output capacitance
C
ob
V
CB
10 V, I
E
0, f 1 MHz
3
6
pF
RN2112FT
15.4
22
28.6
Input resistor
RN2113FT
R1
32.9
47
61.1
k
Type Name
Marking
RN1112FT
RN1113FT
Type name
Y N
Type name
Y P
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