參數(shù)資料
型號(hào): RN2109F
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
中文描述: 開關(guān),逆變電路,接口電路和驅(qū)動(dòng)電路的應(yīng)用
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 217K
代理商: RN2109F
RN2107F RN2109F
2001-02-08 2/5
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
=
50V, I
E
= 0
100
nA
Collector cut-off
current
RN2107F
~RN2109F
I
CEO
V
CE
=
50V, I
B
= 0
500
nA
RN2107F
V
EB
=
6V, I
C
= 0
0.081
0.15
RN2108F
V
EB
=
7V, I
C
= 0
0.078
0.145
Emitter cut-off current
RN2109F
I
EBO
V
EB
=
15V, I
C
= 0
0.167
0.311
mA
RN2107F
80
RN2108F
80
DC current gain
RN2109F
h
FE
V
CE
=
5V,
I
C
=
10mA
70
Collector-emitter
saturation voltage
RN2107F
~RN2109F
V
CE (sat)
I
C
=
5mA,
I
B
=
0.25mA
0.1
0.3
V
RN2107F
0.7
1.8
RN2108F
1.0
2.6
Input voltage (ON)
RN2109F
V
I (ON)
V
CE
=
0.2V,
I
C
5mA
2.2
5.8
V
RN2107F
0.5
1.0
RN2108F
0.6
1.16
Input voltage (OFF)
RN2109F
V
I (OFF)
V
CE
=
5V,
I
C
0.1mA
1.5
2.6
V
Transition frequency
RN2107F
~RN2109F
f
T
V
CE
=
10V,
I
C
5mA
200
MHz
Collector Output
capacitance
RN2107F
~RN2109F
C
ob
V
=
10V, I
E
= 0,
f = 1MH
z
3
6
pF
RN2107F
7
10
13
RN2108F
15.4
22
28.6
Input resistor
RN2109F
R1
32.9
47
61.1
k
RN2107F
0.191
0.213
0.232
RN2108F
0.421
0.468
0.515
Resistor ratio
RN2109F
R1/R2
1.92
2.14
2.35
相關(guān)PDF資料
PDF描述
RN2110 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2111 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2205 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2201 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2202 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN2109FS(TPL3) 功能描述:開關(guān)晶體管 - 偏壓電阻器 -50mA -20volts 3Pin 47K x 22Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
RN2109MFV 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2109MFV(TPL3) 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA -50volts 3Pin 47K x 22Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
RN2109-TE85L 制造商:Toshiba America Electronic Components 功能描述:
RN2110 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications