參數(shù)資料
型號(hào): RN2110
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
中文描述: 開(kāi)關(guān),逆變電路,接口電路和驅(qū)動(dòng)電路的應(yīng)用
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 156K
代理商: RN2110
RN2110,RN2111
2001-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2110,RN2111
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1110, RN1111
Equivalent Circuit
Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
50V, I
E
= 0
100
nA
Emitter cut-off current
I
EBO
V
EB
=
5V, I
C
= 0
100
nA
DC current gain
h
FE
V
CE
=
5V, I
C
=
1mA
120
400
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
5mA, I
B
=
0.25mA
0.1
0.3
V
Transition frequency
f
T
V
CE
=
10V, I
C
=
5mA
200
MH
z
Collector output capacitance
C
ob
V
CB
=
10V, I
E
= 0, f = 1MH
z
3
6
pF
RN2110
3.29
4.7
6.11
Input resistor
RN2111
R1
7
10
13
k
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
2
2H1A
Unit: mm
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