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參數(shù)資料
| 型號： | RN2106 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) |
| 中文描述： | 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 256K |
| 代理商： | RN2106 |
RN2101 RN2106
2001-06-07
1
Type No.
R1 (k
)
R2 (k
)
RN2101
4.7
4.7
RN2102
10
10
RN2103
22
22
RN2104
47
47
RN2105
2.2
47
RN2106
4.7
47
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101,RN2102,RN2103
RN2104,RN2105,RN2106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resister Values
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2101~2106
V
CEO
50
V
RN2101~2104
10
Emitter-base voltage
RN2105, 2106
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
RN2101~2106
T
stg
55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
―
―
2-2H1A
Unit: mm
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN2106(TE85L,F) | 制造商:Toshiba 功能描述:PNP 50V 100mA 制造商:Toshiba America Electronic Components 功能描述:Transistor, digital, PNP, RN2106(F) |
| RN2106ACT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2106CT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications |
| RN2106CT(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP CST3 -20V -50A |
| RN2106F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 |
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