參數(shù)資料
型號: RN2104
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
中文描述: 東芝晶體硅外延式進步黨(厘進程)
文件頁數(shù): 1/7頁
文件大?。?/td> 256K
代理商: RN2104
RN2101 RN2106
2001-06-07
1
Type No.
R1 (k
)
R2 (k
)
RN2101
4.7
4.7
RN2102
10
10
RN2103
22
22
RN2104
47
47
RN2105
2.2
47
RN2106
4.7
47
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101,RN2102,RN2103
RN2104,RN2105,RN2106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resister Values
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN2101~2106
V
CEO
50
V
RN2101~2104
10
Emitter-base voltage
RN2105, 2106
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
RN2101~2106
T
stg
55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
2-2H1A
Unit: mm
相關PDF資料
PDF描述
RN2101 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2102 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2103 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2105 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2106 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
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