參數(shù)資料
型號： RN1964FE
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
中文描述： 東芝npn型晶體管硅外延型（厘進程）（偏置電阻內(nèi)置晶體管）
文件頁數(shù)： 1/7頁
文件大?。?/td> 272K
代理商： RN1964FE
RN1961~RN1966
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1961,RN1962,RN1963
RN1964,RN1965,RN1966
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in US6 (ultra super mini type 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2961~RN2966
Equivalent Circuit and Bias Resistor Values
Equivalent Circuit
(Top View)
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1961~1966
V
CEO
50
V
RN1961~1964
10
Emitter-base voltage
RN1965, 1966
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1961~1966
T
stg
55~150
C
*:
Total rating
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1B
Type No.
R1 (k
)
R2 (k
)
RN1961
4.7
4.7
RN1962
10
10
RN1963
22
22
RN1964
47
47
RN1965
2.2
47
RN1966
4.7
47
Unit: mm
相關(guān)PDF資料
PDF描述
RN1965 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1965FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1966FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1973 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN1964FS 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1964FS(TPL3) 功能描述:開關(guān)晶體管 - 偏壓電阻器 Polarity=NPNx2 4.7K x 4.7Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
RN1965 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1965(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:TRAN DUAL NPN US6 50V 100A
RN1965CT 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
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