參數(shù)資料
型號: RN1973
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
中文描述: 開關(guān),逆變電路,接口電路和驅(qū)動(dòng)電路的應(yīng)用
文件頁數(shù): 1/4頁
文件大小: 183K
代理商: RN1973
RN1973
2004-05-20
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1973
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications.
Two devices are incorporated into an Ultra-Super-Mini (6-pin) package
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more compact
equipment and lowers assembly cost.
Diverse resistance values are available suited to a range of different circuit
designs.
Equivalent Circuit and Bias Resistor Values
R1: 47 k
(Q1, Q2 common)
Maximum Ratings
(Ta =
25°C) (Q1, Q2 common)
Note:
Total rating
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2J1B
Weight: 0.0068 g (typ.)
Equivalent Circuit
(top view)
6
5
4
1
2
3
Q2
Q1
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
(Note)
200
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
R1
B
C
E
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