參數(shù)資料
型號(hào): RN1961FE
廠商: Toshiba Corporation
英文描述: CONNECTOR ACCESSORY
中文描述: 連接器附件
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 95K
代理商: RN1961FE
RN1961FE~RN1966FE
2002-01-29
3
Type Name
Marking
RN1961FE
RN1962FE
RN1963FE
RN1964FE
RN1965FE
RN1966FE
Type name
X X A
Type name
X X B
Type name
X X C
Type name
X X D
Type name
X X E
Type name
X X F
相關(guān)PDF資料
PDF描述
RN1963FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1961 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1963 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN2007 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2008 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN1961FS 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1961FS(TPL3) 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 50mA 20volts 6Pin 4.7K x 4.7Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
RN1962 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1962CT 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
RN1962FE 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)