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參數(shù)資料
| 型號(hào)： | RN1610 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 177K |
| 代理商： | RN1610 |
RN1610,RN1611
2001-06-07
2
Electrical Characteristics
(Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
―
V
EB
= 50V, I
C
= 0
―
―
100
nA
DC current gain
h
FE
―
V
CE
= 50V, I
C
= 1mA
120
―
700
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Translation frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1MHz
―
3
6
pF
RN1610
3.29
4.7
6.11
Input resistor
RN1611
R1
―
―
7
10
13
k
(Q1, Q2 Common)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| RN1611 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) |
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