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參數(shù)資料
| 型號(hào)： | RN1611 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 177K |
| 代理商： | RN1611 |
RN1610,RN1611
2001-06-07
1
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
RN1610,RN1611
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Including two devices in SM6 (super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2610, RN2611
Equivalent Circuit
Maximum Ratings
(Ta = 25 C) (Q1, Q2 Common)
Characterisstic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
300
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
*
Total rating
Equivalent Circuit
(Top View)
JEDEC
EIAJ
TOSHIBA
Weight: 0.015g
―
―
2-3N1A
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN1701 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN1702 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN1703 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN1704 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN1705 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
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