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參數(shù)資料
| 型號(hào)： | RN1423 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 322K |
| 代理商： | RN1423 |
RN1421 RN1427
2002-02-08
2
Electrical Characteristics (Ta = 25
°
C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
V
CB
= 50V, I
E
= 0
―
―
100
Collector cut-off
current
RN1421~1427
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
RN1421
3.85
―
7.14
RN1422
1.75
―
3.25
RN1423
0.82
―
1.52
RN1424
V
EB
= 10V, I
C
= 0
0.38
―
0.71
RN1425
0.365
―
0.682
RN1426
V
EB
= 5V, I
C
= 0
0.35
―
0.65
Emitter cut-off current
RN1427
I
EBO
―
V
EB
= 6V, I
C
= 0
0.378
―
0.703
mA
RN1421
60
―
―
RN1422
65
―
―
RN1423
70
―
―
RN1424
90
―
―
RN1425
90
―
―
RN1426
90
―
―
DC current gain
RN1427
h
FE
―
V
CE
= 1V, I
C
= 100mA
90
―
―
―
I
C
= 50mA, I
B
= 2mA
Collector-emitter
saturation voltage
RN1421~1427
V
CE (sat)
―
I
C
= 50mA, I
B
= 1mA
―
―
0.25
V
RN1421
1.0
―
3.5
RN1422
1.4
―
4.5
RN1423
2.0
―
6.5
RN1424
3.0
―
12.0
RN1425
0.6
―
2.0
RN1426
0.7
―
2.5
Input voltage (ON)
RN1427
V
I (ON)
―
V
CE
= 0.2V, I
C
= 100mA
1.0
―
3.0
V
RN1421~1424
0.8
―
1.3
RN1425, 1426
0.4
―
0.8
Input voltage (OFF)
RN1427
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
0.5
1.0
V
Transition frequency
RN1421~1427
f
T
―
V
CE
= 5V, I
C
= 20mA
―
300
―
MHz
Collector Output
capacitance
RN1421~1427
C
ob
―
V
= 10V, I
E
= 0,
f = 1MH
z
―
7
―
pF
RN1421
0.7
1.0
1.3
RN1422
1.54
2.2
2.86
RN1423
3.29
4.7
6.11
RN1424
7
10
13
RN1425
0.329
0.47
0.61
RN1426
0.7
1.0
1.3
Input resistor
RN1427
R1
―
―
1.54
2.2
2.86
k
RN1421~1424
0.9
1.0
1.1
RN1425
0.0423 0.047 0.0517
RN1426
0.09
0.1
0.11
Resistor ratio
RN1427
R1/R2
―
―
0.2
0.22
0.24
―
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN1424 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1425 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1426 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1427 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1444 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN1423(TE85L,F) | 制造商:Toshiba 功能描述:NPN 50V 800mA |
| RN1423TE85LF | 功能描述:開關(guān)晶體管 - 偏壓電阻器 NPN 50V 0.8A TRANSISTOR LOG RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| RN1424 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1424(TE85L,F) | 制造商:Toshiba 功能描述:NPN 50V 800mA |
| RN142-4/02 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CHOKE 3.3MH 4A |
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